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APT75GP120J

PT IGBT, 1200V, 128A, 543W, SOT-227 (ISOTOP)

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APT75GP120J Microchip Technology
APT75GP120J Microchip Technology
APT75GP120J Microchip Technology
бр
ID Code:187805
Производител:Microchip Technology
Цена с ДДС : 67,2266 €
Цена без ДДС : 55,5592 €
VAT:21 %
Наличност:по заявка
Общия запас:0 бр
Marking manufacturer: APT75GP120J
Central warehouse Zdice: 0 бр
Unit:: бр
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КоличествоЦена без ДДСЦена с ДДС
1 + 55,5592 €67,2266 €
5 + 53,2458 €64,4274 €
10 + 50,9308 €61,6263 €
25 + 48,6158 €58,8251 €


Basic information:

Marking manufacturerAPT75GP120J 
Type of component:IGBT-PT 
KategorieIGBT Full Silicon 
Configuration:single (1T) 
Construction:1*IGBT 
Number of circuits (in case) 1 ks
Type of material:!_si-silicon_! 
RoHSДа 
REACHНе 
Type of casing:MODUL 
Case:SOT-227 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:бр 
Weight:36 [g]
Type of packaging:TUBE 
Small package (Number of units):30 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)128 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.


Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET

 

Idc max (Tc/Ta=25°C)128 [A]
IF(AV) (Tc/Ta=100÷119°C)57 [A]
UCE (sat) (@25°C)3.3 [V]
Pmax with heatsink (TC=25°C)543 [W]
tr (Turn-on / rise time)40 [ns]
tf/tq (Turn-off / fall time)56 [ns]
Qg (Total Gate Charge)320 [nC]
Cin (Input Capacitance)7035 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)150 [°C]
Rthjc1 IGBT0.23 [°C/W]
RM - Pitch pins15 [mm]
RM1 - Spacing of rows 12.7 [mm]
Number of Pins
D - Outer diameter 4.1 [mm]
W - Width 25.3 [mm]
L - Length 38.1 [mm]
H - Height 12 [mm]
Rozměry/Velikost (LxWxH)SOT-227 [mm]

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