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APT50GP60BG

PT IGBT, 600V, 100A, 625W, TO-247

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APT50GP60BG Microchip Technology
APT50GP60BG Microchip Technology
APT50GP60BG Microchip Technology
бр
ID Code:187741
Производител:Microchip Technology
Цена с ДДС : 19,6763 €
Цена без ДДС : 16,2614 €
VAT:21 %
Наличност:по заявка
Общия запас:0 бр
Marking manufacturer: APT50GP60BG
Central warehouse Zdice: 0 бр
Unit:: бр
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КоличествоЦена без ДДСЦена с ДДС
1 + 16,2614 €19,6763 €
5 + 15,5843 €18,8570 €
10 + 14,9064 €18,0368 €
25 + 14,2289 €17,2170 €


Basic information:

Marking manufacturerAPT50GP60BG 
Type of component:IGBT-PT 
KategorieIGBT Full Silicon 
Configuration:single (1T) 
Construction:1*IGBT 
Number of circuits (in case) 1 ks
Type of material:!_si-silicon_! 
RoHSДа 
REACHНе 
Type of casing:THT 
Case:!_to-247ad_3_! 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:бр 
Weight:7.2 [g]
Type of packaging:TUBE 
Small package (Number of units):30 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 600 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)100 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.


Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET

 

Idc max (Tc/Ta=25°C)100 [A]
IF(AV) (Tc/Ta=100÷119°C)72 [A]
UCE (sat) (@25°C)2.2 [V]
Pmax with heatsink (TC=25°C)625 [W]
tr (Turn-on / rise time)36 [ns]
tf/tq (Turn-off / fall time)60 [ns]
Qg (Total Gate Charge)165 [nC]
Cin (Input Capacitance)5700 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)150 [°C]
Rthjc1 IGBT0.2 [°C/W]
RM - Pitch pins5.45 [mm]
Number of Pins
D - Outer diameter 3.65 [mm]
W - Width 16 [mm]
L - Length 21 [mm]
H - Height [mm]
Rozměry/Velikost (LxWxH)TO-247 [mm]
Dimensions of outlets1,4 [mm]
Lv - Length of outlets19.8 [mm]

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